NTE NTE268, NTE269 Datasheet
NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
Features:
D Low Collector–Emitter Saturation Voltage: V
CE(sat)
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Colllector Current, I
C
CEO
CES
EBO
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (TA = +25°C), P
B
D
Derate Above 25°C (Note 3) 13.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
D
Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
J
thJA
thJC
= 1.5V Max @ IC = 1.5A
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The NTE268 is a discontinued device and no longer available.
Note 2. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%.
Note 3. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(BR)CEOIC
CBO
I
CES
EBO
= 10mA, Note 4 50 – – V
VCB = 50V, IE = 0, TJ = +150°C – – 20 µA
VCE = 50V, VBE = 0 – – 0.5 µA
VEB = 13V, IC = 0 – – 100 nA
ON Characteristics (Note 4)
DC Current Gain h
FE
IC = 200mA, VCE = 5V 10000 – –
IC = 1.5A, VCE = 5V 1000 – –
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
= 1.5A, IB = 3mA – – 1.5 V
= 1.5A, IB = 3mA – – 2.5 V
Dynamic Characteristics
Collector Capacitance
NTE268
C
cb
VCB = 10V, IE = 0, f = 1MHz – – 10 pF
NTE269 – – 25 pF
High Frequency Current Gain |hfe| IC = 20mA, VCE = 5V, f = 100MHz 1.0 – –
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE268
C
B
C
E
1.200
(30.48)
.500
(12.7)
(9.52)
Ref
.300
(7.62)
NTE269
C
B
.400
(10.16)
Min
EBC
.100 (2.54) .100 (2.54)
.180 (4.57).380 (9.56)
.132 (3.35) Dia
.325
.070 (1.78) x 45°
Chamf
.050 (1.27)
E
Loading...