NTE NTE2643 Datasheet

NTE2643

Silicon NPN Transistor,

VHF/UHF Low Noise Amp

(Surface Mount)

Features:

D Low Noise Figure, High Gain
D NF = 1.1dB, |S

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

|2 = 13dB (f = 1GHz)

21e

CBO

CEO

EBO

C

C

stg

J

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Output Capacitance C
Reverse Transfer Capacitance C
Transition Frequency f
Insertion Gain |S

Noise Figure NF VCE = 10V, IC = 5mA, f = 500MHz – 1 – dB

CBO
EBO

FE

21e

VCB = 10V, IE = 0 – – 1 µA
VEB = 1V, IC = 0 – – 1 µA
VCE = 10V, IC = 20mA 80 – 240
VCB = 10V, IE = 0, f = 1MHz, Note 1

ob

re

VCE = 10V, IC = 20mA 5 7 – GHz

T

|2VCE = 10V, IC = 20mA, f = 500MHz – 18 – dB

VCE = 10V, IC = 20mA, f = 1GHz 9.5 13.0 – dB

VCE = 10V, IC = 5mA, f = 1GHz – 1.1 2.0 dB

– 1.1 1.6 pF
– 0.65 1.05 pF

Note 1. Cre is measured by 3 terminal method with capacitance bridge.

.008 (0.2)

CE

.083
(2.1)

EB

.051 (1.3)

.079 (2.0) .049(1.25)

.037

(0.95)

.004 (0.1)