NTE NTE2642 Datasheet

NTE2642

Silicon NPN Transistor

Horizontal Deflection Output

High Speed Switch

Features:

D High Breakdown Voltage
D High Reliability
D High Speed Switching
D Wide Area of Safe Operation (ASO)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous DC 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Power Dissipation, P

TC = +25°C 65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TA = +25°C 3.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CES
CEO

EBO

C

J

stg

1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f

CE(sat)IC
BE(sat)IC

CBO

EBO

FE

T

VCB = 1000V, IE = 0 – – 50 µA
VCB = 1700V, IE = 0 – – 1 mA
VEB = 7V, IC = 0 – – 50 µA
VCE = 5V, IC = 8A 6 – 12

= 8A, IB = 2A – – 3 V
= 8A, IB = 2A – – 1.5 V

VCE = 10V, IC = 0.1A, f = 0.5MHz – 3 – MHz

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Switching Time

Storage Time t
Fall Time t

.222 (5.65) Max

.140 (3.55)

.354
(9.0)

stg

IC = 8A, Resistance loaded,
IB1 = 2A, IB2 = –4A

f

.199

(5.05)

– – 3.0 µs
– – 0.2 µs

.638 (16.2) Max

Isol

1.673
(42.5)

Max

.835

(21.2)

Max

.091
(2.3)
Max

.817

(20.75)

Max

.433 (11.0)

B E

C