NTE NTE2642 Datasheet
NTE2642
Silicon NPN Transistor
Horizontal Deflection Output
High Speed Switch
Features:
D High Breakdown Voltage
D High Reliability
D High Speed Switching
D Wide Area of Safe Operation (ASO)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous DC 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Collector Power Dissipation, P
TC = +25°C 65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C 3.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
CBO
CES
CEO
EBO
C
J
stg
1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
CE(sat)IC
BE(sat)IC
CBO
EBO
FE
T
VCB = 1000V, IE = 0 – – 50 µA
VCB = 1700V, IE = 0 – – 1 mA
VEB = 7V, IC = 0 – – 50 µA
VCE = 5V, IC = 8A 6 – 12
= 8A, IB = 2A – – 3 V
= 8A, IB = 2A – – 1.5 V
VCE = 10V, IC = 0.1A, f = 0.5MHz – 3 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Switching Time
Storage Time t
Fall Time t
.222 (5.65) Max
.140 (3.55)
.354
(9.0)
stg
IC = 8A, Resistance loaded,
IB1 = 2A, IB2 = –4A
f
.199
(5.05)
– – 3.0 µs
– – 0.2 µs
.638 (16.2) Max
Isol
1.673
(42.5)
Max
.835
(21.2)
Max
.091
(2.3)
Max
.817
(20.75)
Max
.433 (11.0)
B E
C
Loading...