NTE NTE2641 Datasheet
NTE2641
Silicon NPN Transistor
Horizontal Deflection Output for
High Resolution Displays & Color TVs
Features:
D High Voltage: V
D Low Saturation Voltage: V
D High Speed: tf = 0.1µs Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous DC 17A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 34A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Collector Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
CBO
C
= 1500V
CE(sat)
CBO
CEO
EBO
stg
= 3V Max
C
J
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Collector Output Capacitance C
(BR)CEOIC
CE(sat)IC
BE(sat)IC
CBO
EBO
FE
T
ob
VCB = 1500V, IE = 0 – – 1 mA
VEB = 5V, IC = 0 – – 100 µA
= 10mA, IB = 0 750 – – V
VCE = 5V, IC = 2A 22 – 48
VCE = 5V, IC = 7A 9 – 18
VCE = 5V, IC = 14A 5 – 8
= 14A, IB = 3.5A – – 3 V
= 14A, IB = 3.5A – 1.0 1.5 V
VCE = 10V, IC = 0.1A – 2 – MHz
VCB = 10V, IE = 0, f = 1MHz – 240 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Switching Time
Storage Time t
Fall Time t
Storage Time t
Fall Time t
.222 (5.65) Max
.140 (3.55)
.354
(9.0)
stg
stg
ICP = 9A, IB1(end) = 1.3A,
fH = 64kHz
f
ICP = 7.5A, IB1(end) = 1.1A,
fH = 100kHz
f
.199
(5.05)
– 2.7 3.0 µs
– 0.2 0.3 µs
– 1.8 2.0 µs
– 0.10 0.15 µs
.638 (16.2) Max
Isol
1.673
(42.5)
Max
.835
(21.2)
Max
.091
(2.3)
Max
.817
(20.75)
Max
.433 (11.0)
B E
C
Loading...