NTE NTE2641 Datasheet

NTE2641

Silicon NPN Transistor

Horizontal Deflection Output for

High Resolution Displays & Color TVs

Features:

D High Voltage: V
D Low Saturation Voltage: V
D High Speed: tf = 0.1µs Typ

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

Continuous DC 17A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 34A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

C

= 1500V

CE(sat)

CBO

CEO

EBO

stg

= 3V Max

C

J

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Collector Output Capacitance C

(BR)CEOIC

CE(sat)IC
BE(sat)IC

CBO
EBO

FE

T
ob

VCB = 1500V, IE = 0 – – 1 mA
VEB = 5V, IC = 0 – – 100 µA

= 10mA, IB = 0 750 – – V
VCE = 5V, IC = 2A 22 – 48
VCE = 5V, IC = 7A 9 – 18
VCE = 5V, IC = 14A 5 – 8

= 14A, IB = 3.5A – – 3 V

= 14A, IB = 3.5A – 1.0 1.5 V
VCE = 10V, IC = 0.1A – 2 – MHz
VCB = 10V, IE = 0, f = 1MHz – 240 – pF

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Switching Time

Storage Time t
Fall Time t
Storage Time t
Fall Time t

.222 (5.65) Max

.140 (3.55)

.354
(9.0)

stg

stg

ICP = 9A, IB1(end) = 1.3A,
fH = 64kHz

f

ICP = 7.5A, IB1(end) = 1.1A,
fH = 100kHz

f

.199

(5.05)

– 2.7 3.0 µs
– 0.2 0.3 µs
– 1.8 2.0 µs
– 0.10 0.15 µs

.638 (16.2) Max

Isol

1.673
(42.5)

Max

.835

(21.2)

Max

.091
(2.3)
Max

.817

(20.75)

Max

.433 (11.0)

B E

C