NTE NTE2640 Datasheet

NTE2640

Silicon NPN Transistor

Color TV Horizontal Deflection Output

Features:

D High Speed
D High Collector–Emitter Breakdown Voltage
D High Reliability
D On–Chip Damper Diode

Absolute Maximum Ratings: (TA + 25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V

Emitter–Base Voltage, V
Collector Current, I

C

Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P

TA + 25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC + 25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA + 25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h

Diode Forward Voltage V
Fall Time t

CBO

I

CES
EBO

CEO(sus)IC

CE(sat)IC
BE(sat)IC

FE

VCE = 800V, IE = 0 – – 10 µA
VCE = 1500V, RBE = 0 – – 1.0 mA
VEB = 4V, IC = 0 40 – – mA

= 100mA, IB = 0 800 – – V
= 3.15A, IB = 630mA – – 3.0 V

= 3.15A, IB = 630mA – – 1.5 V
VCE = 5V, IC = 500mA 10 – –
VCE = 5V, IC = 3.5A 5 – 8
IEC = 6A – – 2 V

F

VCC = 200V, VBE = –2V, IC = 2A,

f

IB1 = 400mA, IB2 = 800mA,
Pulse Width = 20µs, Duty Cycle ≤ 1%

– – 0.3 µs

.177 (4.5)

.138
(3.5)

.634

(16.1)

.394 (10.0)

Isol

B E

C

.283
(7.2)

.142
(3.6)

.110 (2.8)

.630

(16.0)

.024
(0.6)

.551

(14.0)

.100 (2.54)