NTE NTE264, NTE263 Datasheet
NTE263 (NPN) & NTE264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain:
h
FE
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
V
CE(sat)
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
Derate Above 25°C 0.52W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate Above 25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature range, T
Storage Temperature range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
= 2500 Typ (NTE263)
= 3500 Typ (NTE264)
= 2V Max @ IC = 5A
CEO
CB
EB
C
B
= +25°C), P
C
= +25°C), P
A
stg
D
D
J
thJC
CEO(sus)
thJA
= 100V Min
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.92°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEO
I
CEX
EBO
= 200mA, IB = 0, Note 1 100 – – V
VCE = 100V, IB = 0 – – 1.0 mA
VCE = 100V, V
VCE = 100V, V
= 1.5V – – 300 µA
EB(off)
= 1.5V, TC = +125°C – – 3 mA
EB(off)
VBE = 5V, IC = 0 – – 5 mA
ON Characteristics (Note 1)
DC Current Gain h
FE
IC = 5A, VCE = 3V 1000 – 20000
IC = 10A, VCE = 3V 100 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 5A, IB = 0.01A – – 2 V
IC = 10A, IB = 0.1A – – 3 V
Base–Emitter ON Voltage V
BE(on)IC
= 3A, VCE = 3V – – 2.8 V
IC = 10A, VCE = 3V – – 4.5 V
Dynamic Characteristics
Small–Signal Current Gain |hfe| IC = 1A, VCE = 5V, f
Output Capacitance C
Small–Signal Current Gain h
VCB = 10V, IE = 0, f = 1MHz – – 200 pF
ob
IC = 1A, VCE = 5V, f = 1kHz 1000 – –
fe
test
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
= 1MHz 20 – –
NTE263
.420 (10.67)
Max
C
B
.147 (3.75)
Dia Max
E
.250 (6.35)
.110 (2.79)
.500
(12.7)
Min
Max
NTE264
.500
(12.7)
C
.070 (1.78) Max
Max
B
Base
.100 (2.54)
Emitter
Collector/Tab
E
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