NTE NTE2639 Datasheet

NTE2639

Silicon NPN Transistor

CRT Horizontal Deflection, High Voltage,

High Speed Switch

Description:

The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic full–pack
envelope designed for use in horizontal deflection circuits of color TV receivers.

Absolute Maximum Ratings:

Collector–Emitter Voltage Peak Value (VBE = 0V), V
Collector–Emitter Voltage (OpenBase), V
Collector Current, I

C

CEO

CESM

DC 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Value 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

DC 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Value 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Base Current (Average over any 20ms period), –I
Reverse Base Current Peak Value (Note 1), –I
Total Power Dissipation (THS ≤ +25°C), P

BM

tot

B(AV)

Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5kΩ), V
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Heatsink, R

J

stg

thJHS

Without Heatsink Compound 3.7K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

With Heatsink Compound 2.8K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Typical Thermal Resistance, Junction–to–Ambient (In Free Air), R

thJA

C

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

825V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. . . . . . . . . . . . . . . . . . . . . . .

9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10kV. . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35K/W. . . . . . . . . . . . . . . . . .

Note 1. Turn–off current.

Electrical Characteristics: (THS = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Isolation Limiting Value and Characteristic

Repetitive Peak Voltage from All Three

V

isol

R.H. ≤ 65%; Clean and Dustfree – – 2500 V

Terminals to External Heatsink

Capacitance from T2 to External

C

isol

f = 1MHz – 22 – pF

Heatsink

Static Characteristics

Collector Cutoff Current I

CES

VCE = 1700V, VBE = 0 – – 1.0 mA

VCE = 1700V, VBE = 0, TJ = +12 5°C – – 2.0 mA
Emitter Cutoff Current I
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)EBOIB

CEO(sus)IB

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h

EBO

CE(sat)IC
BE(sat)IC

FE

VEB = 7.5V, IC = 0A – – 1.0 mA

= 1mA 7.5 13.5 – V
= 0A, IC = 100mA, L = 25mH 825 – – V
= 7A, IB = 1.75A – – 1.0 V

= 7A, IB = 1.75A – – 1.1 V
VCE = 5V, IC = 0.1A – 22 –
VCE = 1V, IC = 7A 4.0 6.0 6.5

Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit)
Turn–Off Storage Time t

Turn–Off Fall Time t

s

I

= 7A, LC = 650µH, Cfb = 18nF ,

C(sat)

VCC = 162V, I

f

LB = 2µH, –VBB = 4V

B(end)

= 1.5A,

– 5.8 6.5 µs
– 0.6 0.8 µs

Note 2. Measured with half sine–wave voltage (curve tracer).

.228 (5.8) Max

.177
(4.5)

.885

(22.5)

Max

.630 (16.0) Max

Isol

E

C

B

.118 (3.0)

1.063
(27.0)

Max

.712

(18.1)

Min

.215 (5.45)

.215 (5.45)