NTE NTE2638 Datasheet

NTE2638

Silicon NPN Transistor

Darlington

Features:

D High Voltage, High Forward and Clamped Reverse Energy
D 10A Peak Collector Current
D 80W at +25°C Case Temperature
D Collector–Emitter Sustaining Voltage: 400V Min at 7A

Absolute Maximum Ratings: (TC = +25°C unless otherwise specifieid)
Collector–Emitter Voltage (IB = 0), V

Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CBO

EBO

Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Base Current, I

B

Continuous Device Dissipation (TC = +25°C), P

Derate Linearly to 150°C 0.64W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Device Dissipation (TA = +25°C), P

Derate Linearly to 150°C 16mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Heat Sink (Note 2), R
Lead Temperature (During Soldering, 1/8” from case, 10sec), T

CEO

D

D

J

stg

thJC

thJA

thCHS

L

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.56°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.7°C/W. . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . . . . . . . . . . . . .

Note 1. This value applies for tw ≤ 5ms, duty cycle ≤ 10%.
Note 2. This parameter is measured using 0.003” (0.08mm) mica insulator with Dow–Corning 11

compound on both sides of the insulator, a 0.138–32 (formally 6–32) mounting screw with
bushing, and a mounting torque of 8 in•lb (0.9 n•m).

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

(BR)CBOIC
(BR)CEOIC

CEX(sus)IC

CEO
EBO

DC Current Gain h

Base–Emitter Voltage V

Collector–Emitter Saturation

V

CE(sat)IB

Voltage

Diode Forward Voltage V
Small–Signal Current Gain h
Small–Signal Forward Current

|hfe| VCE = 5V, IC = 500mA, f = 1kHz 10 – –

Transfer Ratio

FE

BE

fe

= 1mA, IE = 0, Note 3 400 – – V
= 10mA, IB = 0, Note 3 400 – – V

= 7A 400 – – V
VCE = 400V, IB = 0 – – 250 µA
VEB = 8V, IC = 0 – – 15 mA

IC = 2.5A, VCE = 5V, Note 3, Note 4 150 – –
IC = 5A, VCE = 5V, Note 3, Note 4 50 – –
IC = 7A, VCE = 5V, Note 3, Note 4 15 – –
IB = 100mA, IC = 2A, Not e 3, Not e 4

– – 2.2 V

IB = 250mA, IC = 5A, Not e 3, Not e 4 – – 2.3 V

= 10mA, IC = 1A, Not e 3, Not e 4 – – 1.5 V
IB = 100mA, IC = 2A, Not e 3, Not e 4 – – 1.5 V
IB = 250mA, IC = 5A, Not e 3, Not e 4 – – 2.0 V
IF = 7A, Note 3, Note 4 – – 3.5 V

F

VCE = 5V, IC = 500mA, f = 1kHz 200 – –

Collector Capacitance C

obo

IE = 0, VCB = 10V, f = 1MHz – – 100 pF

Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Turn–Off Storage Time t
Turn–Off Fall Time t
Turn–Off Rise Time t
Turn–On Delay Time t

IC = 5A, IB1 = 250mA,

s

IB2 = –250mA, V

f

RL = 50Ω, Note 5

R = 50Ω, Note 5

r

d

BE(off)

= –7.3V,

– 3400 – ns
– 1520 – ns
– 160 – ns
– 20 – ns

Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Voltage Storage Time t
Current Storage Time t
Voltage Rise Time t
Storage Rise Time t
Turn–Off Crossover Time t

sv

rv

xo

V

(clamp)

= Min V

CEX(sus)

, ICM = 5A,

IB1 = 250mA, IB2 = –250mA,

si

Note 5

Note 5

ri

– 3900 – ns
– 4700 – ns
– 1200 – ns
– 1200 – ns
– 2000 – ns

Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle ≤ 2%.
Note 4. These parameters are measured with voltage–sensing contacts separate from the current–

carrying contacts located within 1/8” (3.2mm) from the device body.

Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-

rameters.