NTE NTE2637 Datasheet
NTE2637
Silicon NPN Transistor
CRT Horizontal Deflection, High Voltage,
Fast Switching
Features:
D High Breakdown Voltage Capability
D Fully Insulated Package for Easy Mounting
D Low Saturation Voltage
D High Switching Speed
Applications:
D Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors
D Switching Power Supply for TVs and Monitors
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage (IB = 0), V
Emitter–Base Voltage (IC = 0), V
Collector Current, I
C
CBO
CEO
EBO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp < 5ms) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp < 5ms) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (TC = +25°C), P
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
tot
J
stg
Maximum Thermal Resistance, Junction–to–Case, R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.08°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
CES
EBO
VCE = 1700V,
VBE = 0
VEB = 5V, IC = 0 – – 100 µA
TJ = +125°C – – 2 mA
– – 1 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Sustaining Voltage V
CEO(sus)IC
Emitter–Base Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h
EBOIE
CE(sat)IC
BE(sat)IC
FE
= 100mA 700 – – V
= 10mA, IC = 0 10 – – V
= 5A, IB = 1.25A, Note 1 – – 1.5 V
= 5A, IB = 1.25A, Note 1 – – 1.3 V
IC = 5A, VCE = 5V,
Note 1
Resistive Load
Storage Time t
Fall Time t
VCC = 400V, IC = 5A, IB1 = 1.25A,
s
IB2 = 2.5A
f
Resistive Load
Storage Time t
IC = 5A, f = 15625Hz, IB1 = 1.25A,
s
IB2 = 2.5A,
Fall Time t
Storage Time t
f
V
ceflyback
IC = 5A, f = 31250Hz, IB1 = 1.25A,
s
= 1050 sin(π/10 106)t V
IB2 = 2.5A,
Fall Time t
f
V
ceflyback
= 1200 sin(π/10 106)t V
Note 1. Pulsed: Pulse Duration = 300µs, Duty Cycle = 1.5%.
6 – –
TJ = +100°C 4 – –
– 2.7 3.9 µs
– 190 280 ns
– 2.3 – µs
– 350 – ns
– 2.3 – µs
– 200 – ns
.140 (3.55)
1.673
(42.5)
Max
.222 (5.65) Max
.354
(9.0)
.835
(21.2)
Max
.091
(2.3)
Max
.199
(5.05)
.817
(20.75)
Max
.638 (16.2) Max
Isol
B E
C
.433 (11.0)
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