NTE NTE2636 Datasheet

NTE2636

Silicon NPN Transistor

Horizontal Deflection w/Internal Damper Diode

Features:

D High Breakdown Voltage: V
D Built–In Damper Diode
D Isolated TO3PFM Type Package

Applications:

D TV/Character Display Horizontal Deflection Output

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Emitter–Base Voltage, V
Collector Current, I

C

Collector Peak Current, I
Collector Surge Current, I

CES

EBO

C(peak)

C(surge)

Collector–Emitter Diode Forward Current, I
Collector Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

CES

stg

= 1500V

D

C

J

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Transfer Ratio h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Emitter Diode Forward Voltage V
Fall Time t

(BR)EBOIE

CE(sat)IC
BE(sat)IC

CES

FE

ECFIF

f

= 500mA, IC = 0 6 – – V
VCE = 1500V, RBE = 0 – – 500 µA
VCE = 5V, IC = 1A – – 25

= 6A, IB = 1.2A – – 5 V

= 6A, IB = 1.2A – – 1.5 V

= 8A – – 2.0 V
ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A,

f H = 31.5kHz

– – 0.5 µs

.197
(5.0)

.615 (15.62).217 (5.5)

Isol

.126 (3.2)

.783

(19.9)

.827

(21.0)

.126

(3.22)

Dia

.197
(5.0)

BCE

.215 (5.47)