NTE NTE264, NTE263 Datasheet

NTE263 (NPN) & NTE264 (PNP)

Silicon Complementary Transistors

Darlington Power Amplifier

Description:

The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.

Features:

D High DC Current Gain:

h

FE

D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:

V

CE(sat)

D Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Power Dissipation (T

Derate Above 25°C 0.52W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

Derate Above 25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature range, T
Storage Temperature range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

= 2500 Typ (NTE263)
= 3500 Typ (NTE264)

= 2V Max @ IC = 5A

CEO

CB

EB

C

B

= +25°C), P

C

= +25°C), P

A

stg

D

D

J

thJC

CEO(sus)

thJA

= 100V Min

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.92°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)IC

CEO

I

CEX

EBO

= 200mA, IB = 0, Note 1 100 – – V
VCE = 100V, IB = 0 – – 1.0 mA
VCE = 100V, V
VCE = 100V, V

= 1.5V – – 300 µA

EB(off)

= 1.5V, TC = +125°C – – 3 mA

EB(off)

VBE = 5V, IC = 0 – – 5 mA

ON Characteristics (Note 1)
DC Current Gain h

FE

IC = 5A, VCE = 3V 1000 – 20000
IC = 10A, VCE = 3V 100 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 5A, IB = 0.01A – – 2 V
IC = 10A, IB = 0.1A – – 3 V

Base–Emitter ON Voltage V

BE(on)IC

= 3A, VCE = 3V – – 2.8 V
IC = 10A, VCE = 3V – – 4.5 V

Dynamic Characteristics

Small–Signal Current Gain |hfe| IC = 1A, VCE = 5V, f
Output Capacitance C
Small–Signal Current Gain h

VCB = 10V, IE = 0, f = 1MHz – – 200 pF

ob

IC = 1A, VCE = 5V, f = 1kHz 1000 – –

fe

test

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

= 1MHz 20 – –

NTE263

.420 (10.67)

Max

C

B

.147 (3.75)

Dia Max

E

.250 (6.35)

.110 (2.79)

.500

(12.7)

Min

Max

NTE264

.500

(12.7)

C

.070 (1.78) Max

Max

B

Base

.100 (2.54)

Emitter

Collector/Tab

E