NTE NTE261, NTE262 Datasheet

NTE261 (NPN) & NTE262 (PNP)

Silicon Complementary Transistors

Darlington Power Amplifier

Description:

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.

Features:

D High DC Current Gain: hFE = 2500 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: V

CEO(sus)

D Low Collector–Emitter Saturation Voltage:

V

CE(sat)

= 2V Max @ IC = 3A
= 4V Max @ I

= 5A

C

D Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO

CB

EB

Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Power Dissipation (T

B

= +25°C), P

C

D

Derate Above 25°C 0.52W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

A

D

Derate Above 25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Unclamped Inductive Load Energy (Note 1), E 50mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

J

thJC

thJA

= 100V Min @ 100mA

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.92°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. I

= 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100Ω.

C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)IC

CEO

I

CBO
EBO

= 100mA, IB = 0, Note 2 100 – – V
VCE = 50V, IB = 0 – – 0.5 mA
VCB = 100V, IE = 0 – – 0.2 mA
VBE = 5V, IC = 0 – – 2.0 mA

ON Characteristics (Note 2)
DC Current Gain h

FE

IC = 0.5A, VCE = 3V 1000 – –
IC = 3A, VCE = 3V 1000 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 3A, IB = 12mA – – 2.0 V

IC = 5A, IB = 20mA – – 4.0 V

Base–Emitter ON Voltage V

BE(on)IC

= 3A, VCE = 3V – – 2.5 V

Dynamic Characteristics

Small–Signal Current Gain |hfe| IC = 3A, VCE = 4V, f = 1MHz 4.0 – –
Output Capacitance

NTE261

C

ob

VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF

NTE262 – – 200 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

NTE261

.420 (10.67)

C

B

.147 (3.75)

E

Dia Max

Max

.110 (2.79)

.500

(12.7)

Min

.250 (6.35)

Max

NTE262

.500

(12.7)

C

B

.070 (1.78) Max

Base

.100 (2.54)

Max

Emitter

Collector/Tab

E