NTE NTE26 Datasheet
Features:
NTE26
Silicon NPN Transistor
Low Noise Audio Amplifier
D V
= 120V (Min)
CEO
D Low Noise: = 1dB (Typ), 10dB (Max)
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I
Collector Dissipation, P
C
E
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
: (TA = +25°C unless otherwise specified)
CBO
CEO
EBO
J
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
: (TA = +25°C unless otherwise specified)
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Current Gain–Bandwidth Product f
Output Capacitance C
Noise NF VCE = 6V, IC = 0.1mA, f = 1kHz,
CBO
EBO
FE
CE(sat)IC
VCB = 120V, IE = 0 – – 0.1 µA
VEB = 5V, IC = 0 – – 0.1 µA
VCE = 6V, IC = 2mA 350 – 700
= 10mA, IB = 1mA – – 0.3 V
VCE = 6V, IC = 1mA – 100 – MHz
T
VCB = 10V, IE = 0, f = 1MHz – 3.0 – pF
ob
r
= 10kΩ
g
– 1.0 10 dB
.050 (1.27)
.050 (1.27)
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
ECB
.035 (0.9)
.102
(2.6)
Max
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