NTE NTE2598 Datasheet
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, Reliability
D fast Switching Speed
D Wide ASO
NTE2598
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
B
= +25°C), P
C
J
stg
C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
CBO
EBO
FE
VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 1.6A 15 – 40
VCE = 5V, IC = 8A 8 – –
1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain–Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
T
ob
VCE = 10V, IC = 1.6A – 15 – MHz
VCB = 10V, f = 1MHz – 470 – pF
= 12A, IB = 2.4A – – 2.0 V
= 12A, IB = 2.4A – – 1.5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Ω
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEO(sus)IC
Turn–On Time t
Storage Time t
Fall Time t
.810(20.57)
.236
(6.0)
on
stg
f
= 1mA, IE = 0 1 100 – – V
= 10A, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 12A, IB1 = –IB2 = 2.4A,
l = 50µH, Clamped
VCC = 400V,
5IB1 = –2.5I
R = 20Ω
RL = 20
Max
I
=
= 20A,
B2
C
.204 (5.2)
800 – – V
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.137 (3.5)
Dia Max
.215 (5.45)
1.030
(26.16)
.098
(2.5)
BCE
Note: Collector connected to heat sink.
.787
(20.0)
.040 (1.0)
.023
(0.6)
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