NTE NTE2597 Datasheet

Silicon NPN Transistor

High Voltage, High Speed Switch

Features:

D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO

NTE2597

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Dissipation, P

B

D

TA = +25°C 3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 0.8A 10 – 40
VCE = 5V, IC = 4A 8 – –

1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

= 6A, IB = 1.2A – – 2.0 V
= 6A, IB = 1.2A – – 1.5 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gain–Bandwidth Product f
Output Capacitance C
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

Turn–On Time t
Storage Time t
Fall Time t

.221 (5.6)

.123 (3.1)

on

stg

T
ob

VCE = 10V, IC = 0.8A – 15 – MHz
VCB = 10V, f = 1MHz – 215 – pF

= 1mA, IE = 0 1100 – – V
= 10mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB1 = 1.2A, IB2 = –1.2A,

800 – – V

L = 500µH Clamped
IC = 8A, IB1 = 1.6A,

IB2 = –3.2A, RL = 50Ω,
V = 400V

VCC = 400V

f

– – 0.5 µs
– – 3.0 µs
– – 0.3 µs

.134 (3.4) Dia

.630 (16.0)

.315

(8.0)

.804

(20.4)

.866

(22.0)

BCE

.158 (4.0)

.215 (5.45) .040 (1.0)