NTE NTE2591 Datasheet

NTE2591

Silicon NPN Transistor

High Voltage Amp/Switch

Features:

D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V

C

J

stg

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

T

ob
CE(sat)IC
BE(sat)IC

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

VCB = 900V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC =1mA 20 50 120
VCE = 10V, IC = 1mA – 6 – MHz
VCB = 100V, f = 1MHz – 1.6 – pF

2000V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 2mA, IB = 400µA – – 5 V
=2mA, IB = 400µA – – 2 V
= 1mA, IE = 0 2000 – – V
= 1mA, RBE = ∞ 900 – – V
= 1mA, IC = 0 5 – – V

.402 (10.2)

BC E

.035

(0.9)

.346

(8.8)

.433

(11.0)

.177 (4.5)

.051 (1.3)

.019 (0.5)

.100 (2.54)