NTE NTE2586 Datasheet

NTE2586

Silicon NPN Transistor

High Voltage, High Speed Switch

Features:

D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Power Dissipation, P

B

C

TA = +25°C 1.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

VCB = 800V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC =200mA 15 – 40
VCE = 5V, IC = 1A 8 – –

1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V

CE(sat)IC

T
ob

VCE = 10V, IC = 200mA – 15 – MHz
VCB = 10V, f = 1MHz – 60 – pF

= 1.5A, IB = 300mA – – 2.0 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Ω

Parameter Symbol Test Conditions Min Typ Max Unit

Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
Collector Emitter Sustaining Voltage V

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

Turn–On Time t
Storage Time t
Fall Time t

.402 (10.2)

on

stg

=1.5A, IB = 300mA – – 1.5 V
= 1mA, IE = 0 1100 – – V
= 5mA, RBE = ∞ 800 – – V
= 1mA, IC = 0 7 – – V
= 1.5A, IB1 = –IB2 = 300mA,

L = 2mH, Clamped
VCC = 400V, IC = 2A,

IB1 = 0.4A, IB2 = – 0.8A,
R = 200Ω

RL = 200

f

.035

(0.9)

800 – – V

– – 0.5 µs
– – 3.0 µs
– – 0.3 µs

.177 (4.5)

.051 (1.3)

BC E

.100 (2.54)

.346

(8.8)

.433

(11.0)

.019 (0.5)