NTE NTE2585 Datasheet

NTE2585

Silicon NPN Transistor

High Voltage Amplifier

Features:

D High Breakdown Voltage
D Low Output Capacitance
D High Reliability
D Intended for High–Density Mounting (Suitable for Sets Whose Height is Restricted)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, V

Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I

C

Continuous 20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

EBO

CEO

C

stg

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO
EBO

FE

T
ob

VCB = 800V, IE = 0 – – 1 µA
VEB = 5V, IC = 0 – – 1 µA
VCE = 5V, IC = 2mA 20 – 50
VCE = 5V, IC = 10mA 10 – –
VCE = 10V, IC = 2mA – 40 – MHz
VCB = 100V, f = 1MHz – 1.6 – pF

= 10mA, IB = 2mA – – 1.0 V
= 10mA, IB = 2mA – – 1.5 V
= 100µA, IE = 0 800 – – V
= 1mA, RBE = ∞ 800 – – V
= 100µA, IC = 0 7 – – V

.402 (10.2)

BC E

.035
(0.9)

.346
(8.8)

.433

(11.0)

.177 (4.5)

.051 (1.3)

.019 (0.5)

.100 (2.54)