NTE NTE2581 Datasheet

NTE2581

Silicon NPN Transistor

High Speed Switching Regulator

Features:

D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Dissipation, P

TA = +25°C 1.75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 70W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Current Gain–Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

CBO
EBO

FE

T
ob

VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 1.6A 20 – 40
VCE = 5V, IC = 8A 10 – –
VCE = 5V, IC = 10mA 10 – –
VCE = 10V, IC = 1.6A – 20 – MHz
VCB = 10V, f = 1MHz – 160 – pF

= 8A, IB = 1.6A – – 0.8 V
= 8A, IB = 1.6A – – 1.5 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

L = 500µH, Clamped
Turn–On Time t
Storage Time t
Fall Time t

on

stg

IC = 10A, IB1 = 2A, IB2 = –4A,

RL = 20Ω, VCC = 200V, Note 2

f

Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%.

.420 (10.67)

= 1mA, IE = 0 500 – – V
= 10mA, RBE = ∞ 400 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB1 = 0.6A, IB2 = –2.4A,

400 – – V

– – 0.5 µs
– – 2.5 µs
– – 0.3 µs

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter