NTE NTE2581 Datasheet
NTE2581
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Collector Dissipation, P
TA = +25°C 1.75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 70W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
CBO
CEO
EBO
C
J
stg
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Current Gain–Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
CBO
EBO
FE
T
ob
VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 1.6A 20 – 40
VCE = 5V, IC = 8A 10 – –
VCE = 5V, IC = 10mA 10 – –
VCE = 10V, IC = 1.6A – 20 – MHz
VCB = 10V, f = 1MHz – 160 – pF
= 8A, IB = 1.6A – – 0.8 V
= 8A, IB = 1.6A – – 1.5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC
L = 500µH, Clamped
Turn–On Time t
Storage Time t
Fall Time t
on
stg
IC = 10A, IB1 = 2A, IB2 = –4A,
RL = 20Ω, VCC = 200V, Note 2
f
Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%.
.420 (10.67)
= 1mA, IE = 0 500 – – V
= 10mA, RBE = ∞ 400 – – V
= 1mA, IC = 0 7 – – V
= 6A, IB1 = 0.6A, IB2 = –2.4A,
400 – – V
– – 0.5 µs
– – 2.5 µs
– – 0.3 µs
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
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