NTE NTE2580 Datasheet
NTE2580
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 14A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Collector Power Dissipation, P
B
C
TA = +25°C 1.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
J
stg
Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
CBO
EBO
FE
VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 800mA 20 – 50
VCE = 5V, IC = 4A 10 – –
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V
CE(sat)IC
T
ob
VCE = 5V, IC = 10mA 10 – –
VCE = 10V, IC = 800mA – 20 – MHz
VCB = 10V, f = 1MHz – 80 – pF
= 4A, IB = 800mA – – 0.8 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Ω
Parameter Symbol Test Conditions Min Typ Max Unit
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
Collector Emitter Sustaining Voltage V
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC
Turn–On Time t
Storage Time t
Fall Time t
.402 (10.2)
on
stg
= 4A, IB = 800mA – – 1.5 V
= 1mA, IE = 0 500 – – V
= 5mA, RBE = ∞ 400 – – V
= 1mA, IC = 0 7 – – V
= 3A, IB1 = –0.3A, L = 1mH,
I
= –1.2A, Clamped
B2
VCC = 200V, IC = 5A,
IB1 = 1A, IB2 = – 2A,
R = 40Ω
RL = 40
f
.035
(0.9)
400 – – V
– 0.5 – µs
– 2.5 – µs
– 0.3 – µs
.177 (4.5)
BC E
.051 (1.3)
.346
(8.8)
.433
(11.0)
.019 (0.5)
.100 (2.54)
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