NTE NTE2579 Datasheet

NTE2579

Silicon NPN Transistor

High Voltage, High Speed Switch

Features:

D Fast Switching Speed
D Low Saturation Voltage

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Rqange, T

CBO

CEO

EBO

C

J

stg

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

DC Current Gain h

Gain–Bandwidth Product f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

Fall Time t

FE

T

VCB = 250V, IE = 0 – – 100 µA
VEB = 5V, IC = 0 – – 100 µA
VCE = 1V, IC = 1A 15 – –
VCE = 1V, IC = 5A 10 – 50
VCE = 10V, IC = 500mA 10 40 – MHz

= 5A, IB = 500mA – – 0.8 V
= 5A, IB = 500mA – – 1.5 V
= 1A, IE = 0 400 – – V
= 1mA, RBE = ∞ 200 – – V
= 1mA, IC = 0 6 – – V

VCC = 50V, IC = 5A,

f

= –IB2 = 500mA,

I

B1

Pulse Width = 20µs,
Duty Cycle ≤ 1%

– – 0.3 µs

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54)

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab