NTE NTE2578 Datasheet

NTE2578

Silicon NPN Transistor

TV Horizontal Deflection Output

Features:

D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics: (TA = +25°C unless otherwise specified)

CBO

CEO

EBO

C

J

stg

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

DC Current Gain h

Gain Bandwidth Product f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIC

Fall Time t

FE

T

f

VCB = 40V, IE = 0 – – 0.1 mA
VEB = 5V, IC = 0 – – 0.1 mA
VCE = 5V, IC = 1A 30 – 60
VCE = 5V, IC = 4A 25 – –
VCE = 5V, IC = 1A – 10 – MHz

= 4A, IB = 400mA – 0.5 1.0 V
= 4A, IB = 400mA – – 1.5 V
= 5mA, IE = 0 200 – – V
= 5mA, RBE = ∞ 60 – – V
= 5mA, IC = 0 6 – – V

VCC = 50V, VBB = 5V,

= 5A, IB1 = –IB2 = 500mA,

I

C

– 0.2 0.5 µs

PW = 20µs, Duty Cycle ≤

2.5%

.402 (10.2) Max

.173 (4.4) Max

.224 (5.7) Max

.669

(17.0)

Max

.531

(13.5)

Min

.295
(7.5)

BCE

.122 (3.1)

Dia

.165
(4.2)

.114 (2.9) Max

.100 (2.54) .059 (1.5) Max

NOTE: Tab is isolated