NTE NTE2572 Datasheet

Silicon NPN Transistor

High Current Switch

Features:

D Low Collector Emitter Saturation Voltage
D High Current Capacity

Applications:

D Relay Drivers
D High Speed Inverters
D Converters

NTE2572

Absolute Maximum Ratings:

Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P

C

TA = +25°C 1.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

stg

(TA = +25°C unless otherwise specified)

90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CBO
EBO

FE

VCB = 80V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 0.1 mA
VCE = 2V, IC = 1A 100 – 280

VCE = 2V, IC = 4A 30 – –
Gain–Bandwidth Product f
Collector Emitter Saturation Volt-

age

V

CE(sat)IC

T

VCE = 5V, IC = 4A – 20 – MHz

= 4A, IB = 400mA – – 0.4 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

µ

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

Turn–On Time t
Storage Time t
Fall Time t

.402 (10.2)

on

stg

= 1mA, IE = 0 90 – – V
= 1mA, RBE = ∞ 80 – – V
= 1mA, IC = 0 6 – – V

VCC = 30V, VBE = –5V,

10IB1 = –10IB2 = IC = 2A,

Pulse Width = 20

Pulse Width = 20µs,

Duty Cycle ≤ 1%

f

.035

(0.9)

s,

– 0.1 – µs
– 1.6 – µs
– 0.4 – µs

.177 (4.5)

.051 (1.3)

BC E

.100 (2.54)

.346

(8.8)

.433

(11.0)

.019 (0.5)