NTE NTE2570, NTE2571 Datasheet
NTE2570 (NPN) & NTE2571 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut–Off Current I
Emitter Cut–Off Current I
DC Current Gain h
stg
(TA = +25°C unless otherwise specified)
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
FE
VCB = 80V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 3.0 mA
VCE = 2V, IC = 1A 100 – 280
VCE = 2V, IC = 4A 30 – –
Gain–Bandwidth Product f
Collector–Emitter Saturation Voltage
NTE2570
NTE2571 – – 0.5 V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
T
V
CE(sat)
(BR)CBOIC
(BR)CEOIC
(BR)EBOIC
VCE = 5V, IC = 1A – 20 – MHz
IC = 5A, IB = 10mA – – 0.4 V
= 1mA, IE = 0 90 – – V
= 1mA, RBE = ∞ 80 – – V
= 1mA, IC = 0 6 – – V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time
NTE2570
NTE2571
Storage Time
NTE2570
t
t
on
stg
VCC = 50V, VBE = –5V,
CC BE
10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs
Duty Cycle ≤ 1%
– 0.1 – µs
– 0.2 – µs
– 1.6 – µs
NTE2571 – 0.7 – µs
Fall Time
NTE2570
t
f
– 0.4 – µs
NTE2571 – 0.2 – µs
Note 1. For NTE2571, the polarity is reversed.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.531
(13.5)
Min
BCE
.122 (3.1)
Dia
.165
(4.2)
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54) .059 (1.5) Max
NOTE: Tab is isolated
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