NTE NTE2569 Datasheet

NTE2568 (NPN) & NTE2569 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package
Applications:
Absolute Maximum Ratings
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
: (TC = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TC = +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain Bandwidth Product f Collector–Emitter Saturation Voltage V
: (TC = +25°C unless otherwise specified)
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
CBO EBO
FE
T
CE(sat)IC
VCB = 40V, IE = 0 0.1 mA VEB = 4V, IC = 0 0.1 mA VCE = 2V, IC = 1A 70 280 VCE = 5V, IC = 1A 100 MHz
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A, IB = 0.25A 0.4 V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
µ
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V Collector–Emitter Breakdown Voltage V Emitter–Base Breakdown Voltage V
(BR)CBOIC (BR)CEOIC (BR)EBOIE
Turn–On Time t Storage Time t Collector Current Fall Time t
.402 (10.2) Max
.224 (5.7) Max
.295 (7.5)
on
stg
= 1mA, IE = 0 80 V = 1mA, RBE = 60 V = 1mA, IC = 0 5 V
IC = 5A, IB1 = 20A, IB2 = –20A, VCC = 20V, Pulse Width = 20
Pulse Width = 20µs,
f
Duty Cycle ≤ 1%
.122 (3.1)
Dia
s,
0.1 µs 0.5 µs 0.1 µs
.173 (4.4) Max
.114 (2.9) Max
.669
(17.0)
Max
BCE
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
NOTE: Tab is isolated
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