NTE NTE2566, NTE2567 Datasheet
NTE2566 (NPN) & NTE2567 (PNP)
Silicon Complementary Transistors
High Current, High Speed Switch
Features:
D Low Saturation Voltage
D Fast Switching Speed
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
EBO
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TC = +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Collector–Emitter Saturat ion Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
CE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
EBO
FE
T
VCB = 40V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – 0.1 mA
VCE = 2V, IC = 1A 100 – 200
VCE = 2V, IC = 5A 30 – –
VCE = 5V, IC = 1A – 10 – MHz
= 6A, IB = 0.6A – – 0.4 V
= 1mA, IE = 0 60 – – V
= 1mA, RBE = ∞ 50 – – V
= 1mA, IC = 0 6 – – V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time
NTE2566
NTE2567
Storage Time
NTE2566
t
on
IC = 5A, IB1 = 20A,
C B1
IB2 = –20A, VCC = 20V,
Pulse Width = 20µs,
– 0.1 –
– 0.2 – µs
Duty Cycle ≤ 1%
t
stg
– 1.2 –
NTE2567 – 0.4 – µs
Collector Current Fall Time
NTE2566
t
f
– 0.05 –
NTE2567 – 0.1 – µs
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.173 (4.4) Max
.114 (2.9) Max
µs
µs
µs
.295
(7.5)
.669
(17.0)
Max
BCE
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
NOTE: Tab is isolated
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