NTE NTE2565, NTE2564 Datasheet
NTE2564 (NPN) & NTE2565 (PNP)
Complementary Silicon Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Current Capacity
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
stg
(TA = +25°C unless otherwise specified)
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
FE
VCB = 40V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 0.1 mA
VCE = 2V, IC = 1A 100 – 280
VCE = 2V, IC = 4A 30 – –
Gain–Bandwidth Product f
Collector Emitter Saturation Volt-
age
NTE2564
NTE2565 – – 0.5 V
V
CE(sat)
T
VCE = 5V, IC = 1A – 120 – MHz
IC = 3A, IB = 150mA – – 0.4 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
Turn–On Time t
Storage Time
NTE2564
NTE2565
Fall Time t
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
t
stg
VCC = 10V, VBE = –5V,
20IB1 = –20IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
f
Note 1. For NTE2565, the polarity is reversed.
.402 (10.2)
= 1mA, IE = 0 60 – – V
= 1mA, RBE = ∞ 30 – – V
= 1mA, IC = 0 6 – – V
– 0.1 – µs
– 0.5 – µs
– 0.2 – µs
– 1.6 – µs
.035
.177 (4.5)
(0.9)
.051 (1.3)
BC E
.100 (2.54)
.346
(8.8)
.433
(11.0)
.019 (0.5)
Loading...