NTE NTE2563, NTE2562 Datasheet

NTE2562 (NPN) & NTE2563 (PNP)

Silicon Complementary Transistors

High Current Switch

Description:

The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type
package designed for use as a high current switch. Typical application include relay drivers, high–
speed inverters, converters, etc.

Features:

D Low Collector–Emitter Saturation Voltage
D High Current Capacity

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P

C

TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C 25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

stg

(TA = +25°C unless otherwise specified)

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CBO
EBO

FE

VCB = 40V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 0.1 mA
VCE = 2V, IC = 1A 100 – 200
VCE = 2V, IC = 6A 30 – –

Current Gain–Bandwidth Product f

T

VCE = 5V, IC = 1A – 120 – MHz

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Saturation Voltage

NTE2562

V

CE(sat)IC

NTE2563 – – 0.5 V

= 5A, IB = 0.25A – – 0.4 V

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

= 1mA, IE = 0 60 – – V
= 1mA, RBE = ∞ 30 – – V
= 1mA, IC = 0 6 – – V

Turn–On Time

NTE2562

NTE2563

Storage Time

NTE2562

t

on

VCC = 10V, VBE = –5V,
10IB1 = –10IB2 = IC = 5A,
Pulse Width = 20µs,

Pulse Width = 20µs,
Duty Cycle = 1%

t

stg

– 0.2 – µs
– 0.1 – µs

– 0.5 – µs

NTE2563 – 0.3 – µs

Fall Time t

.402 (10.2) Max

.224 (5.7) Max

f

.122 (3.1)

– 0.03 – µs

.173 (4.4) Max

.114 (2.9) Max

Dia

.295
(7.5)

.669

(17.0)

Max

BCE

.531

(13.5)

Min

.100 (2.54) .059 (1.5) Max

.165
(4.2)

NOTE: Tab is isolated