NTE NTE2563, NTE2562 Datasheet
NTE2562 (NPN) & NTE2563 (PNP)
Silicon Complementary Transistors
High Current Switch
Description:
The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type
package designed for use as a high current switch. Typical application include relay drivers, high–
speed inverters, converters, etc.
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
stg
(TA = +25°C unless otherwise specified)
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
FE
VCB = 40V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 0.1 mA
VCE = 2V, IC = 1A 100 – 200
VCE = 2V, IC = 6A 30 – –
Current Gain–Bandwidth Product f
T
VCE = 5V, IC = 1A – 120 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage
NTE2562
V
CE(sat)IC
NTE2563 – – 0.5 V
= 5A, IB = 0.25A – – 0.4 V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
= 1mA, IE = 0 60 – – V
= 1mA, RBE = ∞ 30 – – V
= 1mA, IC = 0 6 – – V
Turn–On Time
NTE2562
NTE2563
Storage Time
NTE2562
t
on
VCC = 10V, VBE = –5V,
10IB1 = –10IB2 = IC = 5A,
Pulse Width = 20µs,
Pulse Width = 20µs,
Duty Cycle = 1%
t
stg
– 0.2 – µs
– 0.1 – µs
– 0.5 – µs
NTE2563 – 0.3 – µs
Fall Time t
.402 (10.2) Max
.224 (5.7) Max
f
.122 (3.1)
– 0.03 – µs
.173 (4.4) Max
.114 (2.9) Max
Dia
.295
(7.5)
.669
(17.0)
Max
BCE
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
NOTE: Tab is isolated
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