NTE NTE2560, NTE2559 Datasheet

NTE2559 (NPN) & NTE2560 (PNP)
Silicon Complementary Transistors
Darlington, Motor/Relay Driver
Absolute Maximum Ratings:
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
Continuous 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 26A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Collector Dissipation (T Operating Junction Temperature, T Storage Temperature Range, T
CBO
CEO
EBO
= +25°C), P
FL
stg
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I Collector–Emitter Breakdown Voltage V DC Current Gain h Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V
(TA = +25°C unless otherwise specified)
CBO EBO
(BR)CEOIC
FE CE(sat)IC BE(sat)IC
VCB = 120V, IE = 0 10 µA VEB = 6V, IC = 0 10 mA
VCE = 4V, IC = 8A 2000
Note 1. For NTE2560, the polarity is reversed.
= 10mA, RBE = 120 V
= 8A, IB = 16mA 1.5 V = 8A, IB = 16mA 2.5 V
NTE2559
(NPN)
NTE2560
(PNP)
B
.123 (3.1)
C
E
.221 (5.6)
.315
(8.0)
C
B
E
.134 (3.4) Dia
.630 (16.0)
.804
(20.4)
.866
(22.0)
BCE
.158 (4.0)
.215 (5.45) .040 (1.0)
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