NTE NTE256 Datasheet
NTE256
Silicon NPN Transistor
w
Darlington
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (IE = 0), V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
C
B
= 0), V
C
= 0), V
Continuous 28A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
Base Current, I
Total Power Dissipation (T
= 10ms) 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
B
≤ +25°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
CBO
CEO
EBO
tot
J
stg
/Damper Diode
thJC
600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to + 175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
CEO
I
CEV
EBO
CEO(sus)IC
CE(sat)IC
V
= 400V, IB = 0 – – 1 mA
CEO
VCE = 600V, VBE = 1.5V, Note 1 – – 100 µA
VCE = 600V, VBE = 1.5V, TC = +100°C,
Note 1
VEB = 2V, IC = 0, Note 1 – – 175 mA
= 100mA, Note 1 400 – – V
= 10A, IB = 0.5A – – 2.0 V
IC = 18A, IB = 1.8A – – 2.5 V
IC = 22A, IB = 2.2A – – 3.0 V
IC = 28A, IB = 5.6A – – 5.0 V
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
– – 2 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Saturation Voltage V
BE(sat)IC
= 10A, IB = 0.5A, Note 1 – – 2.5 V
IC = 18A, IB = 1.8A, Note 1 – – 3.0 V
IC = 22A, IB = 2.2A, Note 1 – – 3.3 V
DC Current Gain h
FE
VCE = 5V, IC = 10A 30 – –
VCE = 5V, IC = 18A 20 – –
Diode Forward Voltage V
IF = 22A – – 4 V
F
Resistive Switching Times
Turn–On Time t
Storage Time t
Fall Time t
on
s
VCC = 250V, IC = 10A, IB1 = 0.5A,
V
f
BE(off)
= –5V
Inductive Switching Times
Storage Time t
Fall Time t
Storage Time t
Fall Time t
s
s
V
= 250V, IC = 10A, IB1 = 0.5A,
Clamp
V
f
V
V
f
= –5V
BE(off)
= 250V, IC = 20A, IB1 = 2A,
Clamp
= –5V
BE(off)
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
– 0.35 0.6 µs
– 0.8 1.5 µs
– 0.25 0.6 µs
– 0.8 1.5 µs
– 0.08 0.5 µs
– 0.8 1.5 µs
– 0.35 0.7 µs
.600
(15.24)
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.173 (4.4)
.550
(13.97)
.055 (1.4)
.060 (1.52)
.430
(10.92)
.500
(12.7)
Min
C
B
E
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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