NTE NTE2558 Datasheet

Silicon NPN Transistor

Darlington, High Voltage, High Speed Switch

w

/ Damper Diode

Features:

D High Reliability
D High Collector–Base Breakdown Voltage
D On–Chip Damper Diode

Applications:

D High–Voltage, High–Power Switching
D Induction Cookers

NTE2558

Absolute Maximum Ratings:

Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current. I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V

B

= +25°C), P

C

J

stg

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

C

CBO
EBO

FE

CEO(sus)IC

CE(sat)IC
BE(sat)IC

(BR)CBOIC

VCB = 800V, IE = 0 – – 0.1 mA
VEB = 5V, IC = 0 – – 600 mA
VCE = 5V, IC = 15A 25 – –

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 100mA 800 – – V
= 15A, IB = 0.75A – – 3.0 V
= 15A, IB = 0.75A – – 2.5 V
= 5mA, IE = 0 150

0

– – V

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Diode Forward Voltage V
Fall Time t

IEC = 15A – – 2.0 V

F

IC = 15A, IB1 = 1A,

f

I

= –5A, VCC = 200V,

B2

R

= 13.3Ω

L

– – 2.0 µs

Schematic Diagram

C

B

E

.137 (3.5)

Dia Max

.236

(6.0)

.215 (5.45)

.810(20.57)

Max

.098
(2.5)

.204 (5.2)

1.030

(26.16)

.787

(20.0)

.040 (1.0)

.023
(0.6)

BCE

Note: Collector connected to heat sink.