NTE NTE2557 Datasheet

Silicon NPN Transistor

Darlington, High Voltage Switch, Power Amp

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 22A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Transistor Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

CBO

CEO

EBO

J

stg

NTE2557

T

thJC

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I

CBO

I

CEO
EBO

DC Current Gain h
Transistion Frequency f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

Turn–On Time t
Storage Time t
Fall Time t

FE

T

on

stg

VCB = 200V – – 0.1 mA
VCE = 200V – – 0.1 mA
VEB = 7V – – 5.0 mA
VCE = 3V, IC = 10A 1500 – 30000
VCE = 10V, IC = 1.5A – 20 – MHz

= 10A, IB = 30mA – – 1.5 V
= 10A, IB = 30mA – – 2.0 V

IB1 = IB2 = 30mA,
IC = 10A, RL = 3Ω,
V

= 4V

V = 4V

BB2

f

– – 2 µs
– – 8 µs
– – 5 µs

.143

(3.65)

Dia

Max

.217
(5.5)

NPN

B

Max

BCE

.197 (5.0).626 (15.9)

.787

(20.0)

C

E

See

Note

.215 (5.45)

.157
(4.0)

.047 (1.2)

.559

(14.2)

Min

.094 (2.4)

Note: Pin2 connected to metal part of

mounting surface.