NTE NTE2553 Datasheet

NTE2553

Silicon NPN Transistor

Darlington, Motor Driver, Switch

Features:

D High DC Current Gain
D High Breakdown Voltage
D Isolated TO220 Type Package

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous ±12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak ±18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Power Dissipation, P

TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cut–Off Current I
Emitter Cut–Off Current I
Collector–Base Breakdown Voltage V
Collector–Emitter Sust aining Voltage V

CBO

EBO
(BR)CBOIC
CEO(sus)IC

DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

Emitter–Collector Forward Voltage V
Transition Frequency f
Collector Output Capacitance C
Turn–On Time t
Storage Time t
Fall Time t

FE

ECF

T
ob

on

stg

VCB = 300V, IE = 0 – – 100 µA
VEB = 6V, IC = 0 50 – 150 mA

= 1mA, IE = 0 300 – – V

= 250mA, L 40mH 200 – – V
VCE = 2V, IC = 5A 500 – 5000
VCE = 2V, IC = 10A 100 – –

= 10A, IB = 100mA – – 2.0 V

= 10A, IB = 100mA – – 2.3 V
IE = 10A, IB = 0 – 1.5 2.0 V
VCE = 2V, IC = 1A – 40 – MHz
VCB = 10V, IE = 0, f = 1MHz – 200 – pF
VCC = 100V,

IB1 = –IB2 = 100mA

f

– – 1.0 µs
– – 12 µs
– – 2.0 µs

B

C

E

.402 (10.2) Max

.224 (5.7) Max

.295
(7.5)

.669

(17.0)

Max

.531

(13.5)

Min

BCE

.173 (4.4)

Max

.122 (3.1)

Dia

.165
(4.2)

.114

(2.9)

Max

.100 (2.54)

.059
(1.5)
Max

NOTE: Tab is isolated