NTE NTE2550 Datasheet
NTE2550
Silicon NPN Transistor
Darlington Driver, Switch
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
C
Continuous 0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
Dielectric Strength (Terminal to case, AC1 minute), Vdis 2kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Mounting Torque (Note 1), TOR 5kg •cm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
CEO
= +25°C), P
C
J
stg
C
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Recommended torque: 3kg • cm.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Sustaining Voltage V
Collector Cut–Off Current I
Emitter Cut–Off Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Gain–Bandwidth Product f
Turn–On Time t
Storage Time t
Fall Time t
(TC = +25°C unless otherwise specified)
CEO
CBO
I
CEO
EBO
FE
CE(sat)IC
BE(sat)IC
T
on
s
f
VCE (Clamp) 400 – – V
VCB = 500V – – 0.1 mA
VCE = 400V – – 0.1 mA
VEB = 12V – – 100 mA
VCE = 2V, IC = 7A 150 – –
= 7A, IB = 70mA – – 1.5 V
= 7A, IB = 70mA – – 2.0 V
VCE = 10V, IC = 1A – 10 – MHz
IB1 = IB2 = 70mA,
IC = 7A, RL = 10Ω,
V
= 4V
V = 4V
BB2
– – 2.0 µs
– – 15 µs
– – 15 µs
Schematic Diagram
C
B
E
.130
(3.3)
Dia
.405 (10.3)
Max
BCE
.189 (4.8)
Max
.157 (4.0)
.660
(16.8)
.550
(14.0)
.100 (2.54) .107 (2.7)
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