NTE NTE255 Datasheet

NTE255 Silicon NPN Transistor Horizontal Driver, Amp
Absolute Maximum Ratings:
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
Power Dissipation (T Power Dissipation (T Maximum Operating Junction Temperature, T Thermal Resistance, Junction–to–Case (T Thermal Resistance, Junction–to–Ambient (T
CBO
CEO
EBO
= +25°C), PDmax 850mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
COLLECTOR LEAD
= +25°C), PDmax 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COLLECTOR LEAD
max +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C), R
A
= +25°C), R
thJA
thJC
325V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . .
147°C/W. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I DC Current Gain h
Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V Transition Frequency f Output Capacitance C Input Capacitance C
(TA = +25°C unless otherwise specified)
CBO
FE
CE(sat)IC BE(sat)IC
T ob
ib
Note 1. Pulse Test: Pulse Width = 300µs.
VCB = 300V 1.0 µA IC = 50mA, VCE = 10V, Note 1 25 – IC = 100mA, VCE = 10V, Note 1 30 – IC = 250mA, VCE = 10V, Note 1 15 – IC = 500mA, VCE = 10V, Note 1 10 50
= 100mA, IB = 10mA, Note 1 0.2 0.5 V
= 500mA, IB = 100mA, Note 1 0.9 1.2 V IC = 50mA 30 300 MHz VCB = 10V, f = 1MHz 15 pF VBE = 0.5V, f = 1MHz 125 pF
.200 (5.08)
.180 (4.57)
.100 (2.54)
.180
E B C
.018 (0.46) .015 (0.38)
(4.57)
.594
(15.09)
3.050 (1.27)
.050 (1.27) .050 (1.27)
.140
(3.55)
.090 (2.28) R
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