NTE255
Silicon NPN Transistor
Horizontal Driver, Amp
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation (T
Power Dissipation (T
Maximum Operating Junction Temperature, T
Thermal Resistance, Junction–to–Case (T
Thermal Resistance, Junction–to–Ambient (T
CBO
CEO
EBO
= +25°C), PDmax 850mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
COLLECTOR LEAD
= +25°C), PDmax 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COLLECTOR LEAD
max +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C), R
A
= +25°C), R
thJA
thJC
325V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . .
147°C/W. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Transition Frequency f
Output Capacitance C
Input Capacitance C
(TA = +25°C unless otherwise specified)
CBO
FE
CE(sat)IC
BE(sat)IC
T
ob
ib
Note 1. Pulse Test: Pulse Width = 300µs.
VCB = 300V – – 1.0 µA
IC = 50mA, VCE = 10V, Note 1 25 – –
IC = 100mA, VCE = 10V, Note 1 30 – –
IC = 250mA, VCE = 10V, Note 1 15 – –
IC = 500mA, VCE = 10V, Note 1 10 – 50
= 100mA, IB = 10mA, Note 1 – 0.2 0.5 V
= 500mA, IB = 100mA, Note 1 – 0.9 1.2 V
IC = 50mA 30 – 300 MHz
VCB = 10V, f = 1MHz – – 15 pF
VBE = 0.5V, f = 1MHz – – 125 pF