NTE NTE2547, NTE2548 Datasheet

NTE2547 (NPN) & NTE2548 (PNP)
Silicon Complementary Transistors
Darlington Driver
Features:
D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage
Applications:
Absolute Maximum Ratings:
Collector to Base Voltage, V Collector to Emitter Voltage, V Emitter to Base Voltage, V Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 2.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T Storage Temperature Range, T
J
stg
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain Bandwidth Product f
CBO EBO
FE
T
VCB = 80V, IE = 0 0.1 mA VEB = 5V, IC = 0 3.0 mA VCE = 3V, IC = 4A 1500 4000 VCE = 5V, IC = 4A 20 MHz
110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
µ
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Saturation Voltage
NTE2547
V
CE(sat)IC
NTE2548 1.0 V
= 4A, IB = 8mA 0.9 1.5 V
Base to Emitter Saturation Voltage V Collector–Base Breakdown Voltage V Collector–Emitter Breakdown Voltage V
BE(sat)IC (BR)CBOIC (BR)CEOIC
= 4A, IB = 8mA 2.0 V = 5mA, IE = 0 110 V = 50mA, RBE = 100 V
Turn–On Time
NTE2547
NTE2548
Storage Time
NTE2547
t
on
IC = 4A, IB1 = 500mA, IB2 = –500mA, Pulse Width = 50
Pulse Width = 50µs,
s,
Duty Cycle 1%, Note 1
t
stg
0.6 µs 0.7 µs
4.8 µs
NTE2548 1.4 µs
Fall Time
NTE2547
t
f
1.6 µs
NTE2548 1.5 µs
Note 1. For NTE2548 (PNP), the polarity is reversed.
NTE2547
(NPN)
C
B
.402 (10.2) Max
.224 (5.7) Max
.173 (4.4)
Max
.122 (3.1)
Dia
.114
(2.9)
Max
.295
E
.669
(17.0)
Max
(7.5)
.165 (4.2)
BCE
NTE2548
(PNP)
.531
C
(13.5)
Min
B
.100 (2.54) .059
E
(1.5)
Max
NOTE: Tab is isolated
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