NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D High Speed Switching
D Wide ASO Range
D High Gain Bandwidth Product
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
Collector Emitter Saturation Volt-
age
NTE2545
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
V
CE(sat)
FE
T
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 40V, IE = 0 – – 0.1 mA
VEB = 5V, IC = 0 – – 3.0 mA
VCE = 2V, IC = 2.5A 2000 5000 –
VCE = 5V, IC = 2.5A – 200 – MHz
IC = 2.5A, IB = 5mA
– 0.9 – V
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2546 – 1.0 1.5 V
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
= 2.5A, IB = 5mA – – 2.0 V
= 5mA, IE = 0 70 – – V
= 50mA, RBE = ∞ 60 – – V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time t
Storage Time
NTE2545
on
t
stg
VCC = 20V, VBE = –5V,
500IB1 = –500IB2 = IC = 2A,
Pulse Width = 50µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
NTE2546
Fall Time t
f
Note 1. For NTE2546, the polarity is reversed.
NTE2545
(NPN)
C
B
E
.147 (3.75)
Dia Max
– 0.3 – µs
– 1.2 – µs
– 1.3 – µs
– 0.2 – µs
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.250 (6.35)
NTE2546
(PNP)
.070 (1.78) Max
C
B
E
Base
.100 (2.54) Collector/Tab
Max
.500
(12.7)
Min
Emitter