NTE NTE2546, NTE2545 Datasheet

NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D High Speed Switching D Wide ASO Range D High Gain Bandwidth Product
Absolute Maximum Ratings:
Collector Base Voltage, V Collector Emitter Voltage, V Emitter Base Voltage, V Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain–Bandwidth Product f Collector Emitter Saturation Volt-
age
NTE2545
(TA = +25°C unless otherwise specified)
J
stg
CBO EBO
V
CE(sat)
FE
T
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 40V, IE = 0 0.1 mA VEB = 5V, IC = 0 3.0 mA VCE = 2V, IC = 2.5A 2000 5000 – VCE = 5V, IC = 2.5A 200 MHz
IC = 2.5A, IB = 5mA
0.9 V
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2546 1.0 1.5 V Base Emitter Saturation Voltage V Collector Base Breakdown Voltage V Collector Emitter Breakdown Voltage V
BE(sat)IC (BR)CBOIC (BR)CEOIC
= 2.5A, IB = 5mA 2.0 V = 5mA, IE = 0 70 V = 50mA, RBE = 60 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn–On Time t Storage Time
NTE2545
on
t
stg
VCC = 20V, VBE = –5V, 500IB1 = –500IB2 = IC = 2A, Pulse Width = 50µs, Duty Cycle 1%, Note 1
Duty Cycle ≤ 1%, Note 1
NTE2546
Fall Time t
f
Note 1. For NTE2546, the polarity is reversed.
NTE2545
(NPN)
C
B
E
.147 (3.75)
Dia Max
0.3 µs
1.2 µs 1.3 µs 0.2 µs
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.250 (6.35)
NTE2546
(PNP)
.070 (1.78) Max
C
B
E
Base
.100 (2.54) Collector/Tab
Max
.500
(12.7)
Min
Emitter
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