NTE NTE2539 Datasheet

Silicon NPN Transistor

High Voltage, High Speed Switch

Features:

D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO

NTE2539

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Dissipation, P

B

D

TA = +25°C 2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 160W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 3.2A 15 – 50
VCE = 5V, IC = 16A 10 – –

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

VCE = 5V, IC = 10mA 10 – –

CE(sat)IC
BE(sat)IC

= 16A, IB = 3.2A – – 0.8 V
= 16A, IB = 3.2A – – 1.5 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gain–Bandwidth Product f
Output Capacitance C
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

Turn–On Time t
Storage Time t
Fall Time t

on

stg

T
ob

VCE = 10V, IC = 3.2A – 20 – MHz
VCB = 10V, f = 1MHz – 300 – pF

= 1mA, IE = 0 500 – – V
= 10mA, RBE = ∞ 400 – – V
= 1mA, IC = 0 7 – – V
= 10A, IB1 = 1A, IB2 = –4A,

400 – – V

L = 200µH Clamped
IC = 20A, IB1 = 4A, IB2 = –8A,

RL = 10Ω, VCC = 200V

f

– – 0.5 µs
– – 2.5 µs
– – 0.3 µs

.615 (15.62).190 (4.82)

C

.787

(20.0)

.591

(15.02)

.787

(20.0)

.126

(3.22)

Dia

BCE

.215 (5.47)