NTE NTE2538 Datasheet

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO

NTE2538

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 32A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Collector Dissipation, P

B

D

TA = +25°C 3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature range, T

J

stg

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

VCB = 400V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 3.2A 15 – 50
VCE = 5V, IC = 16A 10 – –

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

VCE = 5V, IC = 10mA 10 – –

CE(sat)IC
BE(sat)IC

= 10A, IB = 2A – – 0.8 V
= 10A, IB = 2A – – 1.5 V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gain–Bandwidth Product f
Output Capacitance C
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Sustaining Voltage V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEX(sus)IC

Turn–On Time t
Storage Time t
Fall Time t

.221 (5.6)

.123 (3.1)

on

stg

T
ob

VCE = 10V, IC = 2A – 20 – MHz
VCB = 10V, f = 1MHz – 230 – pF

= 1mA, IE = 0 500 – – V
= 10mA, RBE = ∞ 400 – – V
= 1mA, IC = 0 7 – – V
= 8A, IB1 = 0.8A, IB2 = –3.2A,

400 – – V

L = 200µH Clamped
IC = 12A, IB1 = 2.4A,

IB2 = –4.8A, RL = 10Ω,
V = 200V

VCC = 200V

f

– – 0.5 µs
– – 2.5 µs
– – 0.3 µs

.134 (3.4) Dia

.630 (16.0)

.315

(8.0)

.804

(20.4)

.866

(22.0)

BCE

.158 (4.0)

.215 (5.45) .040 (1.0)