NTE NTE2537, NTE2536 Datasheet

Silicon Complementary Transistors
Features:
D High Current Capacity D Wide ASO Range D Low Saturation Voltage
Applications:
NTE2536 (NPN) & NTE2537 (PNP)
High Current Switch
Absolute Maximum Ratings:
Collector Base Voltage, V Collector Emitter Voltage, V Emitter Base Voltage, V Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 65A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I Collector Power Dissipation (T
B
= +25°C), P
C
Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h
Collector Emitter Saturation Volt­age
stg
(TA = +25°C unless otherwise specified)
J
CBO EBO
FE
V
CE(sat)IC
110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 100V, IE = 0 0.1 mA VEB = 5V, IC = 0 0.1 mA VCE = 2V, IC = 4A 50 140 VCE = 2V, IC = 16A 20
= 16A, IB = 1.6A 0.8 V
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Emitter Saturation Voltage V Collector Base Breakdown Voltage V Collector Emitter Breakdown Voltage V Emitter Base Breakdown Voltage V
BE(sat)IC (BR)CBOIC (BR)CEOIC (BR)EBOIE
= 16A, IB = 1.6A 1.5 V = 1mA, IE = 0 110 V = 5mA, RBE = 100 V = 1mA, IC = 0 6 V
.787
(20.0)
.591
(15.02)
.615 (15.62).190 (4.82)
C
.126
(3.22)
Dia
.787
(20.0)
BCE
.215 (5.47)
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