NTE NTE2534, NTE2535 Datasheet
NTE2534 (NPN) & NTE2535 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
Collector–Emitter Saturation Voltage
NTE2534
= +25°C), P
C
J
stg
(TA = +25°C unless otherwise specified)
CBO
EBO
h
V
CE(sat)
FE1
FE2
T
C
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 80V, IE = 0 – – 0.1 mA
VEB = 4V, IC = 0 – – 0.1 mA
VCE = 2V, IC = 1A 100 – 280
VCE = 2V, IC = 6A 30 – –
VCE = 5V, IC = 1A – 20 – MHz
IC = 6A, IB = 600mA – – 0.5 V
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2535 – – 0.4 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Turn–On Time t
Storage Time
NTE2534
NTE2535
Fall Time
NTE2534
NTE2535 – 0.2 – µs
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
t
stg
t
f
= 1mA, IE = 0 90 – – V
= 1mA, RBE = ∞ 80 – – V
= 1mA, IC = 0 6 – – V
VCC = 50V,
10IB1 = –10IB2 = IC = 5A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
– 0.2 – µs
– 0.7 – µs
– 1.7 – µs
– 0.1 – µs
Note 1. For NTE2535, the polarity is reversed.
.615 (15.62).190 (4.82)
.787
(20.0)
.591
(15.02)
.787
(20.0)
BC/
Case
.126 (3.22) Dia
E
.215 (5.47)
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