NTE NTE2533 Datasheet

High–Definition Color Display

Horizontal Deflection Output

Features:

D High Speed: tf = 100ns Typ
D High Breakdown Voltage: V
D High Reliability

NTE2533

Silicon NPN Transistor

= 1500V

CBO

Absolute Maximum Ratings:

Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I

C

(TA = +25°C unless otherwise specified)

CBO

CEO

EBO

Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Collector Sustaining Voltage V
Emitter Cutoff Current I
DC Current Gain h

C

J

stg

(TA = +25°C unless otherwise specified)

CES

I

CBO

CEO(sus)IC

EBO

FE

VCE = 1500V – – 1.0 mA
VCB = 800V, IE = 0 – – 10 µA

VEB = 4V, IC = 0 – – 1.0 mA
VCE = 5V, IC = 1A 8 – 30 –
VCE = 5V, IC = 20A 4 – 8

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 100mA, IB = 0 800 – – V

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Storage Time t
Fall Time t

CE(sat)IC
BE(sat)IC

stg

= 20A, IB = 5A – – 5 V
= 20A, IB = 5A – – 1.5 V

IC = 12A, IB1 = 2.4A,
IB2 = –4.8A

f

– – 3 µs
– – 0.2 µs

.137
(3.5)

Dia

Max

.236
(6.0)

.810 (20.57)

Max

.098

(2.5)

.204 (5.2)

1.030

(26.16)

.787

(20.0)

BC E

.040 (1.0).215 (5.45)

NOTE: Pin2 connected to heatsink

.023
(0.6)