NTE NTE2532 Datasheet
NTE2532
Integrated Circuit
NMOS, 32K EPROM, 300ns
Description:
The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only
memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate
technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including
program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull–
up reistors, and each output can drive one Series 74 circuit without external resistors. The data outputs are three–state for connecting mutiple devices to a common bus.
Since the NTE2532 operates from a single +5V supply (in the read mode), it is ideal for use in microprocessor systems. One other (+25V) supply is needed for programming but all programming signals
are TTL level, requiring a single 10ms pulse. For programming outside of the system, existing
EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random.
Total programming time for all bits is 41 seconds.
Features:
D Organization: 4096 x 8
D Single +5V Power Supply
D All Inputs/Outputs Fully TTL Compatible
D Static Operation (No Clocks, No Refresh)
D Max Acces/Min Cycle Time: 300ns
D 8–Bit Output for Use in Microprocessor Based Systems
D N–Channel Silicon–Gate Technology
D 3–State Output Buffers
D Low Power Dissipation:
Active – 400mW Typical
Standby – 100mW Standby
D Guaranteed DC Noise Immunity with Standard TTL Loads
D No Pull–Up Resistors Required
Absolute Maximum Ratings:
Supply Voltage (Note 2), V
Supply Voltage (Note 2), V
(TA = 0° to +70°C, Note 1 unless otherwise specified)
CC
PP
–0.3V to +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–0.3V to +28V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Input Voltages (Note 1) –0.3V to +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage (Operating, with Respect to V
Operating Ambient Temperature Range, T
Storage Temperature Range, T
stg
) –0.3V to 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SS
A
0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Stres ses bey ond th ose l iste d u nder “ Absolute M aximum Ratings” m ay c ause p ermanent d am-
age to the device. This is a stress rating only and functional operation of the device at these
or any other conditions beyond t hose i ndicated i n t he “Recommended Operation Conditions”
section of this specification is not implied. Exposure to absolute–maximum–rated conditions
for extended periods may affect device reliability.
Note 2. Under absolute m aximum r atings, v oltage v alues a re w ith r espect t o t he m ost n egative s upply
voltage, V
(substrate).
S
Recommended Operating Conditions:
Parameter Symbol Test Conditions Min Typ Max Unit
Supply Voltage V
V
V
High Level Input Voltage V
Low Level Input Voltage V
Read Cycle Time t
Operating Ambient Temperature T
CC
PP
SS
c(rd)
Note 3 4.75 5.0 5.25 V
Note 4 – V
CC
– 0 – V
IH
IL
2 – VCC+1 V
–0.1 – +0.8 V
300 – – ns
A
0 – 70 °C
– V
Note 3. VCC must be applied before or at the same time as VPP and removed after or at the same
time as V
. The device must not be inserted into or removed from the board when VPP is
PP
applied.
Note 4. V
can be connected to VCC directly (except in the programming mode). VCC supply current
PP
in this case would be ICC + IPP. During programming, VPP must be maintained at 2 5 V (±1V).
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
High Level Output Voltage V
Low Level Output Voltage V
Input Current (Leakage) I
Output Current (Leakage) I
VPP Supply Current I
VPP Supply Current (During Program Pulse) I
VCC Supply Current (Standby) I
VCC Supply Current (Active) I
(Over full range of recommended operating conditions)
OH
OL
PP1
PP2
CC1
CC2
IOH = –400µA 2.4 – – V
IOL = 2.1mA – – 0.45 V
VI = 0V to 5.25V – – ±10 µA
l
VO = 0.4V to 5.25V – – ±10 µA
O
VPP = 5.25V, PD/PGM = V
PD/PGM = V
PD/PGM = V
PD/PGM = V
IL
IH
IL
– – 12 mA
IL
– – 30 mA
– 20 –30 mA
– 80 160 mA
Capacitance: (Over recommended voltage and operating ambient temperature range, f = 1MHz,
Note 5, Note 6)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Capacitance C
Output Capacitance C
VI = 0V, f = 1MHz – 4 6 pF
i
VO = 0V, f = 1MHz – 8 12 pF
o
Note 5. All typical values are at TA = +25°C and nominal voltages.
Note 6. Capacitance measurements are made on a sample basis only.
Switching Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Access Time from Address t
Access Time from PD/PGM t
Output Data Valid after Address Change t
Output Disable Time from PD/PGM (Note 7) t
(Over full range of recommended operating conditions, Note 5, Note 8)
a(A)
a(PR)
v(A)
dis
CL = 100pF,
1 Series 74 TTL Load,
t
≤ 20ns, tf ≤ 20ns,
tr ≤ 20ns, tf ≤ 20ns,
r
Note 8, Note 9
– – 300 ns
– – 300 ns
0 – – ns
– – 100 ns
Note 5. All typical values are at TA = +25°C and nominal voltages.
Note 7. Value calculated from 0.5V delta to measured output level
Note 8. Timing measurement reference levels: inputs 0.8V and 2V, outputs 0.65V and 2.2V.
Note 9. Common test conditions apply for t
PD/PGM
= VIL.
except during programming. For t
dis
a(A)
and t
dis
,
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