NTE NTE253 Datasheet
NTE253 (NPN) & NTE254 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
B
EB
C
Total Power Dissipation (T
(TA = +25°C unless otherwise specified)
CEO
CB
= +25°C), P
C
D
Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
(TA = +25°C unless otherwise specified)
(BR)CEOIC
CEO
I
CBO
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= 50mA, IB = 0, Note 1 80 – – V
VCE = 80V, IB = 0 – – 100 µA
VCE = 80V, IE = 0 – – 100 µA
VCE = 80V, IE = 0, TC = +100°C – – 500 µA
3.23°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Cutoff Current I
EBO
VBE = 5V, IC = 0 – – 2.0 mA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE253
NTE254 VCE = 3V, IC = 2A 750 2000 –
NTE253 & NTE253 VCE = 3V, IC = 4A 100 – –
Collector–Emitter Saturation Voltage
NTE253
NTE254 IC = 2.0A, IB = 40mA – – 2.8 V
NTE253 & NTE254 IC = 4.0A, IB = 40mA –
Base–Emitter ON Voltage
NTE253
NTE254 VCE = 3V, IC = 2.0A – – 2.5 V
NTE253 & NTE254 VCE = 3V, IC = 4.0A – – 3.0 V
Dynamic Characteristics
Small–Signal Current Gain |hfe| VCE = 3V, IC = 1.5A, f = 1MHz 1.0 – –
h
V
CE(sat)
V
BE(on)
FE
VCE = 3V, IC = 1.5A 750 2000 –
IC = 1.5A, IB = 30mA – – 2.5 V
–
VCE = 3V, IC = 1.5A – – 2.5 V
3.0 V
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and
NTE254 (PNP).
NTE253
.330 (8.38)
Max
C
.175
(4.45)
B
.450
Max
(11.4)
Max
E
.118 (3.0)
Dia
.655
(16.6)
NTE254
Max
.030 (.762) Dia
C
B
ECB
.090 (2.28)
E
.130 (3.3)
Max
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