NTE NTE253 Datasheet

NTE253 (NPN) & NTE254 (PNP)

Silicon Complementary Transistors

Darlington Power Amplifier

Description:

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.

Features:

D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

EB

C

Total Power Dissipation (T

(TA = +25°C unless otherwise specified)

CEO

CB

= +25°C), P

C

D

Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC

CEO

I

CBO

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

= 50mA, IB = 0, Note 1 80 – – V
VCE = 80V, IB = 0 – – 100 µA
VCE = 80V, IE = 0 – – 100 µA
VCE = 80V, IE = 0, TC = +100°C – – 500 µA

3.23°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Cutoff Current I

EBO

VBE = 5V, IC = 0 – – 2.0 mA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

NTE253
NTE254 VCE = 3V, IC = 2A 750 2000 –
NTE253 & NTE253 VCE = 3V, IC = 4A 100 – –

Collector–Emitter Saturation Voltage

NTE253
NTE254 IC = 2.0A, IB = 40mA – – 2.8 V
NTE253 & NTE254 IC = 4.0A, IB = 40mA –

Base–Emitter ON Voltage

NTE253
NTE254 VCE = 3V, IC = 2.0A – – 2.5 V
NTE253 & NTE254 VCE = 3V, IC = 4.0A – – 3.0 V

Dynamic Characteristics

Small–Signal Current Gain |hfe| VCE = 3V, IC = 1.5A, f = 1MHz 1.0 – –

h

V

CE(sat)

V

BE(on)

FE

VCE = 3V, IC = 1.5A 750 2000 –

IC = 1.5A, IB = 30mA – – 2.5 V

–

VCE = 3V, IC = 1.5A – – 2.5 V

3.0 V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and

NTE254 (PNP).

NTE253

.330 (8.38)

Max

C

.175

(4.45)

B

.450

Max

(11.4)

Max

E

.118 (3.0)

Dia

.655

(16.6)

NTE254

Max

.030 (.762) Dia

C

B

ECB

.090 (2.28)

E

.130 (3.3)

Max