NTE NTE2528, NTE2529 Datasheet
NTE2528 (NPN) & NTE2529 (PNP)
Silicon Complementary Transistors
High Voltage Switch
Features:
D High Voltage and High Current Capacity
D Fast Switching Time
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 120V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC = 100mA 100 – 400
VCE = 5V, IC = 10A 80 – –
Gain–Bandwidth Product f
Output Capacitance
NTE2528
NTE2529 – 22 – pF
Collector–Emitter Saturation Voltage
NTE2528
NTE2529 – 0.2 0.45 V
C
V
CE(sat)
T
ob
VCE = 10V, IC = 50mA – 120 – MHz
VCB = 10V, f = 1MHz – 12 – pF
IC = 500mA, IB = 50mA – 0.13 0.5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Turn–On Time t
Storage Time
NTE2528
NTE2529
Fall Time
NTE2528
BE(sat)IC
on
t
stg
t
f
= 500mA, IB = 50mA – 0.85 1.2 V
= 10µA, IE = 0 180 – – V
= 1mA, RBE = ∞ 160 – – V
= 10µA, IC = 0 6 – – V
VCC = 100V, VBE = –5V,
– 60 – ns
10IB1 = –10IB2 = IC = 700mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
– 1.2 – ns
– 0.7 – ns
– 80 – ns
NTE2529 – 50 – ns
Note 1. For NTE2529, the polarity is reversed.
.256 (6.5) .090 (2.3)
.059 (1.5)
.197 (5.0)
BCE
.002 (0.5)
.275
(7.0)
.295
(7.5)
.002(0.5)
.090 (2.3)
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