NTE NTE2527, NTE2526 Datasheet
NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current and High f
D Excellent Linearity of h
D Fast Switching Time
T
FE
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 100V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC = 500mA 140 – 400
VCE = 5V, IC = 3A 40 – –
Gain–Bandwidth Product
NTE2526
NTE2527 – 130 – MHz
Output Capacitance
NTE2527
NTE2526 – 65 – pF
f
T
C
ob
VCE = 10V, IC = 500mA – 180 – MHz
VCB = 10V, f = 1MHz – 40 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage
V
CE(sat)
NTE2526
NTE2527
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
V
BE(sat)IC
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
t
on
t
stg
NTE2526
NTE2527
Fall Time
t
f
Note 1. For NTE2527, the polarity is reversed.
.256 (6.5) .090 (2.3)
IC = 2A, IB = 200mA – 150 400 mV
– 200 500 mV
= 2A, IB = 200mA – 0.9 1.2 V
= 10µA, IE = 0 120 – – V
= 1mA, RBE = ∞ 100 – – V
= 10µA, IC = 0 6 – – V
VCC = 50V, VBE = –5V,
10IB1 = –10IB2 = IC =2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
– 100 – ns
– 900 – ns
– 800 – ns
50 ns
.059 (1.5)
.197 (5.0)
BCE
.002 (0.5)
.275
(7.0)
.295
(7.5)
.002(0.5)
.090 (2.3)
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