NTE2522 (NPN) & NTE2523 (PNP)
Silicon Complementary Transistors
High Speed Switch
Features:
D High Current Capacity
D High Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
Collector Base Voltage, V
(TA = +25°C unless otherwise specified)
CBO
NTE2522 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2523 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
NTE2522 45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2523 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
Collector Current, I
EBO
C
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current
NTE2522
stg
(TA = +25°C unless otherwise specified)
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
CBO
VCB = 45V, IE = 0 – – 1.0 µA
NTE2523 VCB = 3V, IE = 0 – – 1.0 µA
Emitter Cutoff Current I
DC Current Gain
NTE2522
NTE2523 100 – 400
NTE2522 h
NTE2523 25 – –
Gain–Bandwidth Product
EBO
h
FE1
FE2
f
T
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 2V, IC = 500mA 140 – 400
VCE = 2V, IC = 8A 40 – –
VCE = 2V, IC = 500mA – 250 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2522
C
ob
VCB = 10V, f = 1MHz – 65 – pF
NTE2523 – 100 – pF
Collector–Emitter Saturation Voltage
NTE2522
V
CE(sat)
IC = 4A, IB = 200mA – 0.25 0.7 V
NTE2523 – 0.3 0.8 V
Base–Emitter Saturation Voltage
NTE2522
V
BE(sat)
IC = 4A, IB = 200mA – 0.95 1.8 V
NTE2523 – 0.95 1.3 V
Collector–Base Breakdown Voltage
NTE2522
V
(BR)CBO
IC = 100µA, IE = 0 60 – – V
NTE2523 50 – – V
Collector–Emitter Breakdown Voltage
NTE2522
V
(BR)CEO
IC = 1mA, RBE = ∞ 45 – – V
NTE2523 40 – – V
Emitter–Base Breakdown Voltage V
(BR)EBOIE
Turn–On Time t
Storage Time
NTE2522
NTE2523
t
on
stg
= 10µA, IC = 0 5 – – V
VCC = 25V, VBE = 1V,
– 50 100 ns
20IB1 = –20IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cucle ≤ 1%,
Duty Cucle ≤ 1%,
Note 1
– 150 270 ns
– 120 220 ns
Turn–Off Time
t
off
NTE2522
NTE2523
Note 1. For NTE2523, the polarity is reversed.
.256 (6.5) .090 (2.3)
.197 (5.0)
.059 (1.5)
BCE
– 180 350 ns
– 150 300 ns
.002 (0.5)
.275
(7.0)
.295
(7.5)
.002(0.5)
.090 (2.3)