NTE NTE2521 Datasheet
NTE2521
Silicon NPN Transistor
Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 400MHz Typ
D High Breakdown Voltage: V
D High Current
D Low Reverse Transfer Capacitance and Excellent HF Response
≥ 250V Min
CEO
Absolute Maximum Ratings:
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 150V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 0.1 µA
VCE = 10V, IC = 50mA 60 – 320
VCE = 10V, IC = 250mA 20 – –
Gain Bandwidth Product f
Output Capacitance C
Reverse Transfer Capacitance C
T
ob
re
VCE = 30V, IC = 100mA – 400 – MHz
VCB = 30V, f = 1MHz – 4.2 – pF
VCB = 30V, f = 1MHz – 3.4 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
.118 (3.0)
Dia
CE(sat)IC
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
.315 (8.0)
= 50mA, IB = 5mA – – 1.0 V
= 50mA, IB = 5mA – – 1.0 V
= 10µA, IE = 0 250 – – V
= 1mA, RBE = ∞ 250 – – V
= 100µA, IC = 0 3 – – V
.130
(3.3)
.295
(7.5)
.433
(11.0)
ECB
.610
(15.5)
.094 (2.4)
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