NTE NTE2521 Datasheet

NTE2521

Silicon NPN Transistor

Video Output for HDTV

Features:

D High Gain Bandwidth Product: fT = 400MHz Typ
D High Breakdown Voltage: V
D High Current
D Low Reverse Transfer Capacitance and Excellent HF Response

≥ 250V Min

CEO

Absolute Maximum Ratings:

Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I

C

(TA = +25°C unless otherwise specified)

CBO

CEO

EBO

Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P

C

TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

J

stg

CBO
EBO

FE

250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCB = 150V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 0.1 µA
VCE = 10V, IC = 50mA 60 – 320

VCE = 10V, IC = 250mA 20 – –
Gain Bandwidth Product f
Output Capacitance C
Reverse Transfer Capacitance C

T
ob

re

VCE = 30V, IC = 100mA – 400 – MHz

VCB = 30V, f = 1MHz – 4.2 – pF

VCB = 30V, f = 1MHz – 3.4 – pF

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

.118 (3.0)

Dia

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

.315 (8.0)

= 50mA, IB = 5mA – – 1.0 V
= 50mA, IB = 5mA – – 1.0 V
= 10µA, IE = 0 250 – – V
= 1mA, RBE = ∞ 250 – – V
= 100µA, IC = 0 3 – – V

.130
(3.3)

.295
(7.5)

.433

(11.0)

ECB

.610

(15.5)

.094 (2.4)